CRF Intranet

Molecular Beam Epitaxy (MBE) CRF Sharing Facility Sonipat Campus

MBE is an advanced ultra-high vacuum technique utilized for the deposition of epitaxial layers with exceptional uniformity, precise control over layer thickness at the atomic scale, and the creation of heterostructures with sharp interfaces. This technique has been widely employed as a pivotal tool in fundamental research, spanning over four decades, and has significantly contributed to the exploration of novel physics phenomena and the development of electronic devices. 

Operating under stringent ultra-high vacuum conditions and with meticulous temperature control, MBE directs a precisely regulated beam of atoms from elemental sources towards a substrate. Concurrently, the surface kinetics of the substrate is adjusted by precisely controlling its temperature. Real-time monitoring of the growth process is achieved through the application of in-situ reflective high-energy electron diffraction (RHEED). By employing high-precision control over individual sources and maintaining highly stabilized fluxes, the growth rate can be accurately controlled at the atomic layer level.

MBE system, manufactured by Vinci technology, France, has been successfully installed at CRF, IIT Delhi, Sonipat campus. The MBE comprises three chambers: a Load lock chamber, a Storage chamber, and a deposition chamber. The deposition chamber is equipped with eight effusion cells, a 3-pocket electron-beam evaporator, and two cracker cells dedicated to Selenium and Tellurium. The MBE chamber operates at a base pressure in the low 10-11 mbar range. Throughout the growth process, reflection high-energy electron diffraction (RHEED) is employed to monitor the layer-by-layer growth. The substrate holder employed in this can accommodate substrates with a diameter of up to 2 inches.

Specification of MBE System
  1. Make of MBE system : Manufactured by Vinci technology, France
  2. Maximum substrate heating temperature: 1000 °C  (Deposition chamber) ; 1000 °C (Storage Chamber)
  3. Materials source: Ga, Mo, W, Pt, Se, In, Te, Bi, Sb, Co and Mn
  4. Base Pressure: 4 x 10-11 &  (Deposition chamber) ; 5 x 10-10 mbar (Storage Chamber)
  5. In situ RHEED: 15 KV
  6. Quartz crystal monitor: film thicknes > 1 Å ; Rate > 0.6 Å /minute  
  7. Flux gauge monitor: Flux < 10-6 mbar  
  8. Residual Gas Analyser (RGA)
  9. Substrate Rotation: up to 15 rpm
Samples Requirment
Growth details and sample requirements from users
Growth Paramerters : 
  1. Pre deposition annealing temperature. 
  2. Deposition temperature. 
  3. Growth rate of source materials. 
  4. Post deposition annealing temperature. 
  5. Growth time and/or film thickness.  
Note: Substrate should be UHV compatible and should be sustainable at growth temperature and annealing temperature
Slots Booking : 
  1. User needs to book the instrument for 2 days once in a week for a single growth. 
  2. User must clean the substrate by the standard procedure before introducing it to the MBE chambers. 
  3. Currently, the growth parameters are optimized for the growth of following materials on the given substrate:   a.  MoTe2 on sapphire (0001) and silicon (111) b.  MoSe2 on sapphire (0001) and silicon (111)  
  4. User should book the slots for the growth of above-mentioned materials on the given substrate only.
Testing Charges (Click here)

How to contact

Lab-Physical Location: 

Lab # 16, Central Research Facilities,
IIT Delhi Sonipat Campus Rajiv Gandhi Education City,  Rai, Sonipat – 131029, Haryana
Landmark: Near Ashoka University

Lab Coordinator

Prof. Rajendra Singh
Department of Physics
Indian Institute of Technology Delhi
Email: rsingh@physics.iitd.ac.in

Operational In-charge

Mr. Santanu Kandar, 
IEmail: ​phz208786@iitd.ac.in

Get CRF Registration for 
External users 

1. Registration process (One Time): New Registration for external users.User Verification: Upload photo of Front side and back side of valid Identity card issued by the organization (only .jpeg format, file Size less than 1 Mb, height less than 1000 pixels, width less than 800 pixels). Undertaking: Download the undertaking template ( Download Link ). Duly filled, signed and stamped form should be uploaded in .pdf format. Confirmation: An email will be sent to the user after verification of the documents.

2.Before planning to avail the Instrument facility of CRF IIT Delhi: user must visit https://crf.iitd.ac.in -> Facility -> select the desired facility from left side navigation list.  Read carefully all the relevant information such as required sample type, testing charges and instrument location. Be prepared with details of the samples.

3.Log in and Click on Booking Appointment Tab: All the information relevant to testing must be filled in instrument booking form. In case user does not provide the required information the booking is liable to be rejected. User can upload the relevant existing data of their samples that might help in the measurements.

4.Sample submission & Payment Process: Once the application is submitted, the in-charge will verify the details and approve the request.External users must wait for the approval before making the payment and submitting the samples to concerned lab. After approval the payment should be made by the user. The payment transaction details need to be submitted online before appointment date time.

5.CRF Users can pay amount online using following details:
Beneficiary/Customer's Name: IRD ACCOUNT IITD
Bank Account Number:  10773572600  
Bank Name: State Bank of India Branch Name: IIT Branch
Branch Code: 01077
NEFT IFSC CODE / RTGS: SBIN0001077
please write "CRF _Instrument Name" in the Remarks section while paying. Save the receipt file and upload in the crfbooking system online against your application.Payment can also made in form of demand draft in favour of " IRD ACCOUNT IITD " Payable at New Delhi.6.IIT Delhi 
GST Number : 07AAATI0393L1ZI
PAN Number : AAATI0393L

Signup (External user)

CRF IIT Delhi 
new user registration

IIT Delhi Internal User

.

External User Registration